Literature
Printer-friendly version| Year | Title | Details |
|---|---|---|
| 1989 | Temperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS) | by T.Pavelka and *B.Hemm, Materials Science Forum Vols. 38-41, 469-472 |
| 1989 | Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps | T.Pavelka and G.Ferenczi, Materials Science Forum Vols.38-41, 803-808 |
| 1989 | Dispersive Microwave Transient Spectroscopy of Deep Levels in Semiconductors | by D.Huber, P.Eichinger, G.Ferenczi, T.Pavelka, G.Veszely, Materials Science and Engineering, B4 |
| 1990 | DLTS Investigation of Deep Levels in Bulk GaAs under Uniaxial Stress | by C.A.Londos, T.Pavelka, Semicond. Sci. Technol., 5, 1100-1104 |
| 1991 | Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon | by G.Ferenczi, T.Pavelka, P.Tütto, Japanese Journ. of Applied Physics, 30, No.12B, 3630-3633 |
| 1991 | Improved Method for Depth Profiling of Multilayer Structures | by T.S.Horányi, P.Tütto, G.Endrédi, Applied Surface Science, 50, 143-148 |
| 1991 | Electrochemical Method for the Measurement of Doping Profiles in Silicon | by T.S.Horányi, P.Tütto, G.Endrédi, Proceedings of the 3rd European Conference on Crystal Growth, May 5-11 |
| 1993 | Ballistic Electron Emission Microscopy of Schottky Diodes on RF-Plasma-Treated Silicon | by L.Quattropani, K.Solt, P.Niedermann, I.Maggio-Aprile, O. Fischer, T.Pavelka, Applied Surface Science,70/71, 391-395 |
| 1993 | Electrochemical Etching and Profiling of Silicon | by T.S.Horányi, P.Tütto, Applied Surface Science, 63, 316-321 |
| 1993 | In Situ Bulk Lifetime Measurement on Silicon with a Chemically Passivated Surface | by T.S.Horányi, T.Pavelka, P.Tütto, Applied Surface Science, 63, 306-311 |
| 1993 | Investigation of Recombination Properties of Ti Double Donor in Silicon | by G.Ferenczi, T.Pavelka, P.Tütto, L.Köster, Solid State Phenomena, 32-33, 609-614 |
| 1996 | Identification Possibility of Metallic Impurities in p-Type Silicon by Lifetime Measurement | by T.S.Horányi, P. Tütto, Cs.Kovacsics, J. Electrochem. Soc., 143, No. 1, 216-220 |
| 1996 | New Possibilities for the Microwave Photoconductive Decay Technique | by T. Pavelka, Semiconductor Fabtech, 4th Edition, 247-249 |
| 1997 | Charge Carrier Lifetime Modification in Silicon by High Energy H+, He+ Ion Implantation | by N.Q. Khanh, P. Tütto, E.N. Jaroli, O.Buiu, L.P. Biro, F.Paszti, T.Mohacsy, Cs.Kovacsics, A.Manuaba, J.Gyulai, Materials Science Forum, 248-249, 101-103 |
| 1997 | Charge Carrier Lifetime Modification in Silicon by High Energy H+or He+ Ion | by N.Q.Khanh, P.Tutto, E.N.Jaroli, O.Buiu, L.P.Biro, A.Manuaba, and J.Gyulai, Nucl. Inst. Meth. B127-128, 388-392. |
| 1998 | Problems and Possibilities of Comparing Different Lifetime Measuring Instruments and Techniques | by T. Pavelka, Recombination Lifetime Measurements in Silicon, ASTM publication # STP 1340, D.C. Gupta, F.R. Bacher, W.M. Hughes, Eds., America Society for Testing and Materials, 206-216 |
| 2000 | Qualification of Epi Layers and Interface Properties by an Improved µ-PCD Technique | by T. Pavelka, Gate Dielectric Integrity: Material, Process and Tool Qualification, ASTM STP 1382, D.C. Gupta and G.A. Brown, Eds., American Society for Testing and Materials, 145-154 |
| 2000 | Investigation of Deep Levels and Precipitates Related to Molybdenum in Silicon by DLTS and Scanning Infrared Microscopy | by B. Sandhu, T. Ogikubo, H. Goto, V. Csapo, T. Pavelka, Journ. of Crystal Growth, 210, 116-121 |
| 2000 | Analytical Tools for the Characterization of Power Devices | by H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, B. Simmnacher, B.O. Kolbesen, P. Tutto, T. Pavelka, G. Wachutka: J. Electrochem. Soc., 147 (10), pp. 3879-3888 |
| 2000 | Carrier lifetime control and characterization of high-resistivity silicon used for high-power devices | by H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, T. Pavelka, G. Wachutka, Proceedings of 198th Meeting of the Electrochemical Society, Phoenix |
| 2001 | Carrier lifetime analysis by photoconductive decay and free carrier absorption measurements | by H-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tutto, T. Pavelka, G. Wachutka, submitted to J. Electrochem. Soc.148 (2001) 11, p. G655.-G661. |
| 2003 | Silicon Epitaxial Layer Recombination and Generation Lifetime Characterization | by D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton, IEEE Transactions on Electron Devices, Vol. 50, No.4, pp 906. |
| 2005 | Quantitative copper measurement in oxidized p-type silicon wafers using microwave photoconductivity decay | by H. Vainola, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka, Appl. Phys. Letters 87, 032109 |
| 2005 | Measurement of copper in p-type silicon using charge-carrier lifetime methods | by M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka, Solid State Phenomena Vols. 108-109 pp. 643-648 |
| 2007 | Monitoring plasma nitridation of HfSiOx by corona charge measurements | by J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch, Microelectronic Engeneering, 84, 2251-2254 |
| 2008 | Nanomechanical properties of ion-implanted Si | by P. M. Nagy, D. Aranyi, P. Horvath, G. Peto, E. Kalman, Surface and Interface Analysis, Vol. 40, Issue 3-4, p 875-880, 10 March, 2008 |
| 2008 | Determining of sheet resistance of implanted wafers with technique of non-contact junction photovoltage measurement | |
| 2005 | Determination of electrically Active Surface Dopant Density in Ultra-Shallow Junction (USJ) Structures with a Non-Destructive Elastic Material Probe (EM-Probe) | R. J. Hillard, M. V. Benjamin, W. C. Ye, J. O Borland |
| 2005 | Recent Developments in Electrical Metrology for MOS Fabrication | R. J. Hillard, M. C. Benjamin, G. A. Brown, |
| 2006 | 45nm Node p+ USJ Formation With High Dopant Activation And Low Damage | by J. Borland, S. Shishiguchi, A. Mineji, W. Krull, D. Jacobson, M. Tanjyo, W. Lerch, S. Paul, J. Gelpey, S. McCoy, J. Venturini, M. Current, V. Faifer, R. Hillard, M. Benjamin, T. Walker, A. Buczkowski, Z. Li, J. Chen |
| ? | Product wafer monitoring of ultra-shallow channel implants with an elastic metal gate (EM-gate) | R. J. Hillard, W. H. Howland, R. G. Mazur, W. Ye, N. K. Variam, |
| 1995 | Element Specific Diagnosis Using Microwave Reflection Photoconductive Decay | by L. Köster, P. Blöchl, L. Fábry, in Jpn. J. Appl. Phys., Vol. 34(1995), pp. 932-936 |
| 1998 | Contamination reduction and control in integrated circiut manufacturing | by J. E. Steinle, in TI Technical Journal, Engineering Quality, April-June, 1998 |
| 1999 | Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing | by M.Yli-Koski, J. Mellin, V. Ovchinnikov, in Solid-State Phenomena, Vols. 69-70, pp. 291-294. |
| 1999 | Evaluation of precipitation and denuded zone depth on different silicon materials | by J. E. Steinle, in TI Technical Journal, Engineering Technology, April-June, 1999 |
| 2001 | Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment | by Hidetaka Takato, Isao Sakata, Rzuichi Shimokawa, Jpn. J. Appl. Phys. Vol 40(2001) pp. L1003-L1004, Part2, No 10A, 1 Oct. 2001 |
| 2001 | Process induced oxide and interface charges and their reactivity with carriers in bulk silicon | by J. E. Steinle, in TI Technical Journal, Engineering Technology, 2001 |
| 2002 | Contactless surface charge semiconductor characterization | by d. K. Schröder, in Materials Science & Engineering B91-92 (2002), 192-210 |
| 2002 | Detection of low-level copper contamination in p-type silicon by means of microwave photoconductive decay measurements | by M.Yil-Koski, M. Palokangas, A. Haarahiltunen, H. Vainöla, J. Storgards, H. Holmberg, J. Sinkkonen, in J. Phys.: Condensed Matter, 14 (2002), 13119-13125 |
| 2003 | Determination of Metallic Impurities in a Silicon Wafer by Local Etching and Electrothermal Atomic Absorption Spectrometry | by H-Y. Chung, S-H Lee, Y-H. Kim, K-S. Lee, D-H. Kim, in Analytical Sciences, The Japan Society for Analytical Chemistry, Vol. 19, July 2003, pp. 1051-1054 |
| 2003 | Improvements in PV performance and Yield (INSPIRE) Report of a project carried out under the DTI's New and Renewable Energy Programme |
by B.J. Garrad, in ... Crown, 14/01/2003 |
| 2007 | Three dimensional mapping of thermal and tunneling electron emission from InAs/GaAs quantum dots | O. Engström, M.Kaniewska, W.Jung, M.Kaczmarczyk, Appl.Phys.Letters 91, 033110 (published online 19 July 2007) |
| 1999 | Lifetime Measurements in SOI and Epi Structures | by T. Pavelka, Z. Batari, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, Proceedings of ALTECH 99, Leuven, Belgium, Electrochemical Society Proceedings Volume 99-16, 48-55. |
| 1999 | Determination of Recombination Center Parameters by the Combined Application of µ-PCD and SPV Techniques | by T. Pavelka, A. Toth, G. Bayer, Proceedings of the Diagnostic Techniques for Semiconductor Materials and Devices, (1999 Joint Int. Meeting, 196th Meeting of The Electrochemical Society (ECS) and the 1999 Fall Meeting of The Electrochemical Society of Japan (ECSJ), Honolulu, Hawaii, Oct. 17-22, 1999., Abstract No. 1370. |
| 1999 | Temperature dependence of carrier recombination lifetimes in n-type silicon | by Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tütto, T. Pavelka, G. Wachutka, Proceedings of the International Semiconductor Device Research Symposium (Charlottesville 1999), pp. 539-542 |
| 2001 | Reflection mode scanning infrared microscope (SIRM) and its applications to defect detection in silicon (Scanning Infrared Microscope and Its Application in Silicon) |
by Cs. Kovacsics, DRIP IX Conference (Sept. 2001), Poster Sessions, P1-B: Defects in Silicon, P1-14 |
| 2003 | Comparative Study on Emitter Sheet Resitivity Measurements for Inline Quality Control | by E. Rüland, P. Fath, T. Pavelka, A. Pap, K. Peter, J. Mizsei, Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka |
| 2005 | Microwave photoconductive decay mapping and investigation of lifetimes in 4H-SiC epitaxial layers | by J. D. Cadwell, A. Pap, A. Shrivastava, Z. Zhang, P.B. Klein, T. Pavelka, T. Sudarshan, O.J. Glembocki, K. Hobart, F. Kub, Presented at Int. Conf. on Silicon Carbide and Related Materials (ICSCRM 2005), Pittsburgh, USA |
| 2006 | Metrology and high resolution mapping of shallow junctions formed by low energy implant processes | by E. Don, A. Pap, T. Pavelka, P. Tutto, C. Wyon, C. Laviron, R. Oechsner, M. Pfeffer, Proceedings of Conf. on Ion Implant Technology (IIT 2006), Marseille, France, CP866, Ion Implantation technology, American Inst. Of Physics, 534-537. |
| 2006 | Carrier Lifetime Mapping and Lifetime studies of 4H-SiC Epilayers | by J. D. Caldwell, P. B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster, Materials Research Society MRS, Spring Meeting |
| 2007 | Carrier Lifetime Measurements in Silicon for Photovoltaic Applications | by T. Pavelka, A. Pap, Gy. Szilágyi, 212th ECS Meeting, October 7-12, Washington, DC |
| 2007 | Improvements to High Resolution Mapping of Junction Photovoltage Measured Sheet resistance by Correcting for wafer edge and compensating for junction leakage | by E. Don, C. Kohn, A. Pap, P. Tutto, T. Pavelka, C. Laviron, C. Wyon, R. Oechsner, M. Pfeffer , 6-9 May 2007 at INSIGHT 2007 Conference, Napa Valley, USA |
| 2007 | High Resolution Mapping of Sheet Resistance reveal implanter or anneal non-uniformities | by , SEMI Seminars, 19th July 2007, San Francisco, USA, West Coast Junction Technology Group, USJ metrology seminar |
| 2007 | Metrology, Analysis and Charaterization in Micro- and Nanotechnologies - A European Challenge | L. Pfitzner, A. Nutsch, R. Oechsner, M. Pfeffer, E. Don, C. Wylon, M. Hurlebaus, in proceedings of Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007), pages 35- |
| 2008 | Junction Photovoltage Metrology and high resolution mapping of ion implants electrically isolated from wafer surface | by Dr. Eric Don, A. Pap, T. Pavelka, C. Wyon, C. Laviron, R. Oechsner, M. Pfeffer, Ion Implantation Technology Conference, Monterey, California, 8th – 13th June |
| 2008 | Ultra Shallow Junctions fabrication by Plasma Immersion Implantation on PULSION® followed by Spike and/or Flash Annealing. Effect of pre-amorphization and co-implantation on Boron diffusion in Silicon | by H. Etienne, F. Torregrosa, G. Semoere, G. Mathieu, L. Roux, F. Cristiano, P. Fazzini, W. Lerch, S. Paul, J. Gelpey, F. Milesi, F. Gonzatti, A. Pap, K. Kis-Szabo, T. Pavelka, E-MRS Spring Meeting, Strasbourg, France, May 26 - May 30 |
| 2008 | Fabrication and acharacterisation challenges on Ultra Shallow Junctions for sub 45 nm CMOS devices. | by F. Torregrosa, H. Etienne, G. Sempere, G. Mathieu, L. Roux, C. Grosjean, R. Daineche, Y. De Puydt, L. Dupuy, P. Galand, A. Pap, K. Kis-Szabo, T. Pavelka, 11th Technical & Scientific Meeting of ARCSIS, 20-21 Nov., STUniversity in Fuveau, France (2008) |
| 2009 | Comparison of Silicon Surface Preparation Methods for Measurement of Minority Carrier Lifetime Using the Microwave Photoconductive Decay (?-PCD) Coupled with Continuous Corona Charge (Charge-PCD) | T. Pavelka, Á. Pap, P. Kenesei, M. Varga, F. Novinics, M. Tallián, G. Borionetti, G. Guaglio, M. Pfeffer, and E. Don in ECS Transactions Volume 25, Issue No. 3, Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009) |
| 2008 | Control of Laser Induced Interface Traps with In-line Corona Charge Metrology | DRAFT for IEEE 2008.08.28. by J-L. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don |
| 1997 | Process Monitoring of Ultrathin Oxides using Surface Charge Analysis | by A. H. Field, In-line characterization techniques for performance and yield enhancement in microelectronic manufacturing, Conference, Austin TX, USA(01/10/1997), vol. 3215, pp. 10-16 |
| 2004 | Measurements of Ultra-Shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe | by R. J. Hillard, R. G. Mazur, W. J. Alexander, C. Win Ye, M. C. Benjamin, J. O. Borland, Materials Research Society MRS Symposium Proceedings vol. 810 |
| 2004 | Accurate Determination of Ultra-Shallow Junction Sheet Resistance with a Non-Penetrating Four Point Probe | R. J. Hillard, J. Borland, C. Win Ye, in Junction Technology, 2004. IWJT '04. The Fourth International Workshop on, pp. 98-101 |
| 2004 | Accurate Determination of Ultra-Shallow Junction Sheet Resistance with a Non-Penetrating Four Point Probe | R. J. Hillard, C. Win Ye, L. Tan, M. C. Benjamin, R. G. Mazur, SEMICON® West, SEMI® Technical Symposium: Innovations in Semiconductor Manufacturing, Semiconductor Equipment and Materials International, ISBN # 1-892568-79-9 |
| 2005 | Ultra Low Energy (ULE) Implant Dose & Activation Monitoring | by J. Borland, R. Hillard, M. Benjamin, E. Gurer, Junction Technologz, 2005. Extended Abstracts if the Fifth International Workshop on, pp 49-52 |
| 2007 | Determination of implant activation and junction leakage with a non-penetrating and non-damaging elastic material probe (EM-Probe) | by Robert J. Hillard, Mark Benjamin, John O. Borland, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT-2007), May 6 - 9, 2007, Napa, California |
| 2007 | Determination of Activated Dopant Profiles with a Novel FastGate® Probe | by Robert J. Hillard, C. Win Ye, Mark C. Benjamin, Kyoichi Suguro, Junction Technology, 2007 International Workshop on, pp 47-48 |
| 1993 | A New Method for Simultaneous Characterisation of Process Cleanliness and True Particle Removal Efficiency | N.E. Henelius, H. Ronkainen, O. J. Anttila, J.M. Molarius, in Proceedings of the Thied International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (Oct. 1993), Vol 94-07, pages 434-441 |
| 1997 | Monitoring of Noble Metals in HF Based Chemistries by u-PCD, SPV, SCI and SCP | A. Daniel, U. Straube, G. Kamarinos, E. Kamieniecki, F. Tradif, Cleaning Technology in Semiconductor Device Manufacturing, proceeding of the Fifth International Symposium (Sept. 1997), Vol. 97-35, pages 400-4007 |
| 1999 | Evaluation of Advanced Pre-Gate Cleanings | C.Cowache, P. Boelen, I. Kashkoush, P Besson, F. Tardif, in Cleaning Technology in Semiconductor Device Manufacturing, Proceedings of the Sixth International Symposium (Oct.1999), Vol. 99-36,pages 59-68 |
| 2000 | Lifetime mapping of Si Wafers by an Infrared Camera | by M. Bail, J. Kentsch, R. Brendel, M. Schulz, in Proceeding of the 28th IEEE Photovoltaic Specialists Conference, (IEEE NewYork 2000.) p 99. |
| 2000 | Low-Cost High Efficient Milticrystalline Silicon for Photovoltaics | by M. B. I Diaz, C. Haessler, in proceedings of the 6th energie "Marie-Curie" Research Training Fellowship Conference, Paris, May, 2000. |
| 2004 | First Results of the Solarcentre Erfurt - a New Pertner in Photovoltaic Research | S.Dauwe, L. Mittelstadt, A. Lawerenz, H.J.Freitag,C. Beneking, H.Aulich, Poster of 19th European Photovoltaic Solar Energy Conference and Exhibition (7-11 June 2004, Paris, France) |
| 2005 | Making Use of Silicon Wafers with Low Lifetimes by Adequate POCl3 Diffusion | J. Lossen, L. Mittelstadt, S. Dauwe, K. Lauer, C. Beneking |