WT-2000 Multifunction Wafer Mapping Tool

The WT-2000 is a powerful tabletop measurement platform for performing many different semiconductor material characterization measurements. The base system includes all the overhead functions necessary to perform characterization measurements, including power supplies, computer and operating software, XY measurement stage, etc. Each system in then configured to the user’s requirements by adding measurement capabilities and automation capabilities from the following menus.
| Automation capabilities menu: |
| • |
100-200mm cassette indexer |
| • |
300mm 13-slot cassette indexer, including open cassettes for 100-300mm wafers |
| • |
300mm 25-slot cassette indexer, including FOUP, FOSB, and open cassettes for 100-300mm wafers |
|
The WT-2000 is typically used to make maps, where the wafer is scanned at a programmable raster. The WT-2000 can also perform measurements at specific, programmable measurement locations.

Contaminated gas in diffusion furnace lowers lifetime of monitor wafer at the source end of the furnace.
The WT-2000 is operated by a proprietary and powerful, yet very user friendly, software system called Wintau32. Measurement results can be viewed on the computer monitor, printed, or exported in a variety of data formats (jpg, html, bmp, ascii). All measurement setup data can be included in the data output. The actual measurement data is stored on the system computer or any computer connected to it and part of the computer network. The data is stored in a proprietary format. Optional purchase of additional software licenses allow viewing and manipulation of the data from any computer connected to the computer network.
The common applications of the WT-2000 include measuring lifetime or diffusion length to detect contamination (including detection and measurement of Fe via either µ-PCD or SPV), monitoring the sheet resistance of ion implanted monitor wafers (after anneal), and measuring oxides (including all CV-type measurements and detection and measurement of mobile charge via bias temperature stress test).
|