The WT-1000 is provided for fast, non-contact carrier lifetime measurement method that is capable of characterizing silicon material in each process step of solar cell manufacturing from as-cut wafer to the finished solar cell. WT-1000b is a model for block measurements
SPECIFICATIONS:
|
| Materials: |
Si, Ge |
| Resistivity range: |
0.1 to 1000Ωcm |
| Laser: |
904nm wavelength |
| Measured spot diameter: |
10mm2 |
| Microwave source: |
variable frequency around 10.3GHz |
| Lifetime range: |
100ns to 20ms |
| Lifetime resolution: |
0.1% |
| Measurement time: |
0.5s/data point |
| Measurement technique: |
µ-PCD |
| Single shot or continuous measurement |
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Additional configurations available if needed