Semiconductor >Measurement Technology >VQ

VQ

VQ technology is, broadly speaking, a non-contact alternative to traditional CV technology, with some additional capabilities.  In CV, one determines depletion depth by measuring the capacitance of the series combination of an oxide layer and the depletion region, while varying the depletion depth by changing the voltage between the substrate and an electrode at the surface of the oxide. 

 VQ involves depositing corona charge on a wafer and computing various paramters from measurement of the surface potential, V, and the charge applied, Q.  VQ measures the depletion depth via the capacitance ΔQ/ΔV, where Q is known from measuring the current drawn by applying the corona charge and V is measured via a Kelvin probe.

Below is a list of some parameters that can be measured using Semilab’s VQ measurement technology, along with a brief explanation of how each parameter is determined.

Semilab’s VQ measurement technology is available as an option in Semilab’s WT-2000 Multifunction Wafer Mapping Tool and in Semilab’s WT-3000 dual FOUP Wafer Mapping Tool for 300mm wafers.

Parameter Symbol

Parameter Name

Method of Determination

Vfb

Flat Band Voltage

The flat band condition is determined by analyzing the VQ curve.  It occurs near accumulation.  The flat band voltage is the surface potential, measured via the Kelvin probe, at the flat band condition.

Tox

Electrical Oxide Thickness

The slope of the VQ curve, in accumulation, is ΔV/ΔQ, which is 1/C, and C is capacitance per area.  1/C=Electrical Oxide Thickness/ε/

Dit

Density of Interface Traps

This is computed from the slope of the VQ curve as it goes from accumulation to inversion.  The exact equations are complicated.

Vtunnel

Tunnel Voltage

Corona is applied to the surface in small increments and the surface potential is measured after each increment.  When the surface potential reaches the tunnel voltage, charge leaks through the oxide, and the surface potential stops increasing