SIRM (Scanning InfraRed Microscopy) is an IR scanning technique used to detect and measure BMDs within a silicon wafer. SIRM is a completely non-destructive technique. In an SIRM system, IR light, having a penetration depth of >100µm, is focused at a depth within the semiconductor sample, and an IR sensitive camera looks at that spot within the wafer.
By moving the part in X and Y, the system creates a picture of defects at a fixed depth.
Changing the focus of the IR beam allows scanning at a deeper depth, and thus it is possible to create many pictures representing slices through the wafer at different depths.
Semilab’s SIRM-300 uses this technology to measure wafers up to (and including) 300mm.
