SIRM-300 Scanning Infrared Microscope
The SIRM-300 Scanning Infrared Microscope is a non-contact, non-destructive, optical instrument, which provides a complete characterization of bulk micro defects (BMDs) such as oxide and metal precipitates, stacking faults, dislocations, slip lines and voids in bulk silicon and in the denuded zone (DZ). GaAs and InP semiconductor materials can also be measured by the SIRM-300. Since reflective confocal scanning microscopy is used, the specimen can be a standard, one side polished wafer.
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Key Features
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Non-contact, non-destructive analysis
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No sample preparation is needed
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10 nm minimum detectable particle size
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Measurable defect density: 105-109 cm-3 |
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Image collection in X-Y and X-Z planes |
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Measurement of epi wafers |
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300 mm measurement capability |
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