Carrier lifetime control and characterization of high resistivity silicon used for high-power devices
H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, T. Pavelka, G. Wachutka:
Proceedings of 198th Meeting of the Electrochemical Society, Phoenix, 2000, in press
Analysis of the Injection Level and Temperature Dependence of Carrier Lifetime by Microwave Photoconductivity Decay
A.Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tütto, T. Pavelka, G. Wachutka
Proceedings Micro Material 2000, Berlin, April 17-19, 2000, in press
Analytical Tools for the Characterization of Power Devices
H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, B. Simmnacher, B.O. Kolbesen, P. Tütto, T. Pavelka, G. Wachutka:
J. of Electrochem. Soc., 147 (10) 3879-3888 (2000)
Temperature dependence of carrier recombination lifetimes in n-type silicon
A.Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze,P. Tütto, T. Pavelka, G. Wachutka
Proceedings of the International Semiconductor Device Research Symposium, Charlottesville 1999, 539-542 (1999)
Qualification of Epi Layers and Interface Properties by an Improved µ-PCD Technique
T. Pavelka
Gate Dielectric Integrity: Material, Process and Tool Qualification, ASTM STP 1382, D.C. Gupta and G.A. Brown, Eds., American Society for Testing and Materials, 145-154, (1999)
Determination of Recombination Center Parameters by the Combined Application of µ-PCD and SPV Techniques
T. Pavelka, A. Toth, G. Bayer
Proceedings of the Diagnostic Techniques for Semiconductor Materials and Devices, (1999 Joint Int. Meeting, 196th Meeting of The Electrochemical Society (ECS) and the 1999 Fall Meeting of The Electrochemical Society of Japan (ECSJ), Honolulu, Hawaii, Oct. 17-22, 1999., Abstract No. 1370.
Investigation of Deep Levels and Precipitates Related to Molybdenum in Silicon by DLTS and Scanning Infrared Microscopy
A.Sandhu, T. Ogikubo, H. Goto, V. Csapo, T. Pavelka
Proceedings of The 8th Intern. Conf. On Defect Recognition,
Imaging and Physics in Semiconductors, Sept 1999, Narita, Japan
Lifetime Measurements in SOI and Epi Structures
T. Pavelka, Z. Batari
Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, Proceedings of ALTECH 99, Leuven, Belgium, Electrochemical Society Proceedings Volume 99-16, 48-55.
Problems and Possibilities of Comparing Different Lifetime Measuring Instruments and Techniques
T. Pavelka
Recombination Lifetime Measurements in Silicon, ASTM publication # STP 1340, D.C. Gupta, F.R. Bacher, W.M. Hughes, Eds., America society for Testing and Materials, 206-216, (1998)
New Possibilities for the Microwave Photoconductive Decay Technique
T. Pavelka
Semiconductor Fabtech, 4th Edition, 247-249 (1996)
Identification Possibility of Metallic Impurities in p-Type Silicon by Lifetime Measurement
T.S.Horányi, P. Tütto, Cs.Kovacsics
Electrochem. Soc., 143, No. 1, 216-220 (1996)
Investigation of Recombination Properties of Ti Double Donor in Silicon
G.Ferenczi, T.Pavelka, P.Tütto, *L.Köster
*Wacker-Chemitronic/Germany +
Solid State Phenomena, 32-33, 609-614 (1993)
In Situ Bulk Lifetime Measurement on Silicon
T.S.Horányi, T.Pavelka, P.Tütto
Applied Surface Science, 63, 306-311 (1993)
Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon
G.Ferenczi, T.Pavelka, P.Tütto
Japanese Journ. of Applied Physics, 30, No.12B, 3630-3633 (1991)
Microwave Photoconductivity Decay Mapping and Investigation of Lifetimes in 4H-SiC Epitaxial Layers
*Joshua D Caldwell, Aron Pap, -Amitesh Shrivastava, -Zehong Zhang, *Paul B Klein, Tibor Pavelka, -Tangali Sudarshan, *Orest J Glembocki, *Karl D Hobart and *Fritz Kub
*Naval Research Laboratory/USA
-University of South Carolina/Comumbia
2006 MRS Spring Metting, April 17 –21 2006, Materials Research Society
Carrier Lifetime Analysis by Microwave Photoconductive Decay (µ-PCD) For 4H SiC Epitaxial Wafers
*G. Chung, *M.J. Loboda, *M.F. MacMillan, *J. Wan and *D.M. Hansen
*Dow Corning Compound Semiconductor Solutions/USA
Materials Science Forum Vols. 556-557 (2007) pp 323-326
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