Modern semiconductor devices require precisely controlled dopant concentration and position, and this can only be achieved via ion implant, with careful annealing.  Typically an n-type species is implanted into p-type material, or vice versa.  Implants are monitored by implanting a monitor wafer, and the monitor wafers are checked after implant by some sort of implant dose monitoring technique – there are several – and after anneal by measuring the sheet resistance of the implanted layer.

Semilab offers an innovative method of checking ion implants after anneal, via a technology we call JPV.  This technology is available in Semilab’s WT-2000 Multifunction Wafer Mapping Tool and in Semilab’s WT-3000, which provides dual FOUP capability for 300mm wafers.